High–low Kelvin probe force spectroscopy for measuring the interface state density

• Ryo Izumi,
• Masato Miyazaki,
• Yan Jun Li and
• Yasuhiro Sugawara

Beilstein J. Nanotechnol. 2023, 14, 175–189, doi:10.3762/bjnano.14.18

• of the effects of semiconductor interface states with high spatial resolution using high and low AC bias frequencies compared with the cutoff frequency of the carrier transfer between the interface and bulk states. Information on the energy spectrum of the interface state density is important for

• interface state density inside semiconductors. We derive an analytical expression for the electrostatic forces between a tip and a semiconductor sample in the accumulation, depletion, and inversion regions, taking into account the charge transfer between the bulk and interface states in semiconductors. We

• show that the analysis of electrostatic forces in the depletion region at high- and low-frequency AC bias voltages provides information about the interface state density in the semiconductor bandgap. As a preliminary experiment, high-low KPFS measurements were performed on ion-implanted silicon

Impact of GaAs(100) surface preparation on EQE of AZO/Al₂O₃/p-GaAs photovoltaic structures

• Piotr Caban,
• Rafał Pietruszka,
• Jarosław Kaszewski,
• Monika Ożga,
• Bartłomiej S. Witkowski,
• Krzysztof Kopalko,
• Piotr Kuźmiuk,
• Katarzyna Gwóźdź,
• Ewa Płaczek-Popko,
• Krystyna Lawniczak-Jablonska and
• Marek Godlewski

Beilstein J. Nanotechnol. 2021, 12, 578–592, doi:10.3762/bjnano.12.48

• a different background. We ascribe it to a low interface state density that can be achieved best when Al2O3 is grown on a GaAs surface previously treated with ammonium hydroxide [36]. The surface preparation in a NH4OH/H2O (1:1) solution results in a almost stoichiometric Ga/As ratio ranging from

A look underneath the SiO₂/4H-SiC interface after N₂O thermal treatments

• Patrick Fiorenza,
• Filippo Giannazzo,
• Lukas K. Swanson,
• Alessia Frazzetto,
• Simona Lorenti,
• Mario S. Alessandrino and
• Fabrizio Roccaforte

Beilstein J. Nanotechnol. 2013, 4, 249–254, doi:10.3762/bjnano.4.26

• insulator–substrate interface depending on the SiO2/4H-SiC roughness. The electrically active incorporated nitrogen produces both a compensation of the acceptors in the substrate and a reduction of the interface state density (Dit). This result can be correlated with the 4H-SiC surface configuration. In

• on the faceted surface exhibit also a lower interface-state density (≈3 × 1011 cm−2·eV−1) with respect to devices on the flat surface (≈7 × 1011 cm−2·eV−1) [12][13]. Here, both the different values of Dit at SiO2/4H-SiC interface and the different doping in the near interface SiC region have been

• × 1012 cm−2·eV−1 (for the 0° off-axis angle) at 0.2 eV from the conduction band edge, higher than the interface state density in the face (11−20), the total macroscopic density of interface states can be written: where And where S is a scale factor, A and B are the mean experimental dimensions of the (11